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1 September 1998 High-performance and stability reticle writing system HL-800M
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998)
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
HL-800M has been developed as electron beam reticle writing system (EB) for advanced reticle production. It is very important for EB to keep high performance constantly in the actual advanced reticle production. To meet such a requirement, this system adopts accelerated voltage of 50kV, variable shaped beam, continuous moving stage and 3-stage deflector. Especially, to improve the positioning accuracy, this system has temperature control system, active vibration-isolation system and the new software for position error correction. The proximity effect correction which changes exposure shot time depending on the pattern density and the multi-exposure function are also installed. As a result, the positing accuracy of 32nm and the long term placement of 28 nm are obtained. The line-width linearity from 1 micrometers to 10 micrometers is within the range of 70 nm, and 40 nm form 1 micrometers to 3 micrometers . The stitching accuracy at the stripe boundary is 26nm, and 20nm in case of the 3-path exposure.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuhiro Kadowaki, Katsuhiro Kawasaki, Kazui Mizuno, Hidetoshi Satoh, Morihisa Hoga, and Ken Uryu "High-performance and stability reticle writing system HL-800M", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998);

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