1 September 1998 High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328842
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
The lithographic performance of high- and standard- transmittance attenuated phase shift masks (PSMs) was investigated in order to determine the suitability of applying attenuated PSMs to the fabrication of 0.15-micrometers hole patterns. Both PSMs had rim structures to eliminate side lobes, and they have two layers on the quartz substrate: a chromium-fluoride attenuated phase shifter layer and an opaque chromium layer. Both PSMs had similar lithographic performances that were high enough for 0.15 micrometers hole patterns.
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Haruo Iwasaki, Keiichi Hoshi, Hiroyoshi Tanabe, "High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328842; https://doi.org/10.1117/12.328842
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