Paper
1 September 1998 Improving the measurement accuracy of pattern width and position of x-ray masks
Shingo Uchiyama, Masatoshi Oda, Miho Sakatani, Tadahito Matsuda
Author Affiliations +
Abstract
Precise measurement of the pattern position and width of x- ray masks is very important for producing highly accurate masks. When the position and width are measured by an optical system while moving the mask on an x-y stage in air, degradation of measurement accuracy or unstable focusing can sometimes occur. To investigate these phenomena, we estimated the measurement accuracy of pattern width and position. A comparison of the measurement accuracy of the width and position of patterns on an x-ray mask with that on a Si wafer showed the measurement accuracy of the pattern width in the membrane is worse than that on the wafer. Moreover, we found that pattern position in the membrane can be measured on the same order as that on the wafer. To improve measurement accuracy, we developed a new technique that involves covering the space in the back side of the membrane and confirmed that the measurement accuracy of pattern width in the membrane is on the same order as that on the wafer.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shingo Uchiyama, Masatoshi Oda, Miho Sakatani, and Tadahito Matsuda "Improving the measurement accuracy of pattern width and position of x-ray masks", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328809
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KEYWORDS
Photomasks

Semiconducting wafers

Silicon

X-rays

Glasses

Wafer bonding

X-ray technology

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