1 September 1998 Mask CD quality assurance specifications for 0.25-μm devices with a practical lithography window
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328825
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
Mask specification requirements in production have been extremely tightened for 0.35 micrometers and 0.25 micrometers devices. Mask critical dimension (CD) specifications and transmission error specs, which were hardly taken care of in the 0.5 micrometers device generations, are the most important ones because they will affect size of optical lithographic exposure-defocus (ED) window significantly. The conventional mask quality assurance methods such as 5 point CD measurements within a mask are no longer effective if one considers CD at stripe butting, CD after focused ion beam defect repair and optical transmissivity after such repair. More extensive assurance methods and specs for such matters are required based on actual ED window.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takehiko Gunji, Takehiko Gunji, Tetuya Kitagawa, Tetuya Kitagawa, Kunihiko Tsuboi, Kunihiko Tsuboi, } "Mask CD quality assurance specifications for 0.25-μm devices with a practical lithography window", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328825; https://doi.org/10.1117/12.328825
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