1 September 1998 Mask technology of extreme-ultraviolet lithography
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328848
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
EUVL employs a reflective mask consisting of a metallized pattern less than 100 nm thick on a state-of-the-art multilayer mirror deposited on a substrate. The key technologies needed for mask fabrication are coating equipment to make defect-free multilayer films and a low- damage mask fabrication process. Current repair and inspection technologies are advanced enough to handle a pattern size of 0.3 micrometers .
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroo Kinoshita, Hiroo Kinoshita, Takeo Watanabe, Takeo Watanabe, Akira Ozawa, Akira Ozawa, Masahito Niibe, Masahito Niibe, "Mask technology of extreme-ultraviolet lithography", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328848; https://doi.org/10.1117/12.328848


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