1 September 1998 Mask technology of extreme-ultraviolet lithography
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328848
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
EUVL employs a reflective mask consisting of a metallized pattern less than 100 nm thick on a state-of-the-art multilayer mirror deposited on a substrate. The key technologies needed for mask fabrication are coating equipment to make defect-free multilayer films and a low- damage mask fabrication process. Current repair and inspection technologies are advanced enough to handle a pattern size of 0.3 micrometers .
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroo Kinoshita, Hiroo Kinoshita, Takeo Watanabe, Takeo Watanabe, Akira Ozawa, Akira Ozawa, Masahito Niibe, Masahito Niibe, } "Mask technology of extreme-ultraviolet lithography", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328848; https://doi.org/10.1117/12.328848
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