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1 September 1998 New distortion metrology using reticle coordinate error
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998)
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
There are several ways to measure distortion of lithography exposure equipment, and with each of the distortion metrology technique, coordinate errors of distortion measurement pattern on the reticle affect distortion measurements based on the coordinate error. We have found, however, that when measuring distortion using two different reticles on the same exposure tool, the two measurement results did not agree with each other with a difference at a 20 nm level even after being corrected according to the measured reticle coordinate error.After studying this problem, we successfully had distortion measurements on the wafer using two different reticles agree with each other at a 10 nm level by introducing a technique called STofs., system offset, method. This paper reports that exposure tool distortion can be extracted with more precision by applying the new reticle coordinate error measurement technique.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Izumi Tsukamoto and Hirohiko Shinonaga "New distortion metrology using reticle coordinate error", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998);


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