1 September 1998 Optimization of ZEN4100(2)
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328821
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
To reduce defect density in real reticles, it is important to control the quality of materials such as resist. In the development of electron beam resist for reticle making, we have tried to improve quality and performance of the resist materials. In this paper, we describe a new resist which has good stability for reticle making. ZEN4100 which is commercially available from NIPPON ZEON CO., LTD. consists of halogenated polystyrene as a main polymer and two kinds of radical captures. Those radical captures bring good edge roughness of patterns on reticle. Because those radical captures trap electrons which travel in unexposed area to crete latent images in accordance with design data. As described in previous paper, the amount of those radical captures is deeply related to CD variation. This means those additives suppress to generate the scum and tails of resist patterns. After researching new radical captures, we found a new resist designed for use in mass production. As a result, no change in the composition of chemicals has been observed for more than six months.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriyuki Mitao, Nobunori Abe, Masahiko Sugimura, "Optimization of ZEN4100(2)", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328821; https://doi.org/10.1117/12.328821
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