Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-um-generation advanced mask fabrication

Wilman Tsai; Frederick T. Chen; Marilyn Kamna; Scott Chegwidden; Steven M. Labovitz; Jeff N. Farnsworth; Giang T. Dao

doi:10.1117/12.328796

1 September 1998 Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-μm-generation advanced mask fabrication

Wilman Tsai, Frederick T. Chen, Marilyn Kamna, Scott Chegwidden, Steven M. Labovitz, Jeff N. Farnsworth, Giang T. Dao

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328796
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

Fabrication of 0.18 micrometers generation clearfield logic device photomask with plasma etch was compared with wet etch method in current 0.25 micrometers mask technology. Spatial consistency between the resist develop and plasma etch modules was critical to achieve < 25 nm CD rng manufacturable process. CD linearity for 0.6 to 3.0 micrometers lines and isolated-nested CD bias for 1.0 micrometers lines were both improved with the plasma etch process. Resist loading and proximity effect is critical for plasma etched clearfield mask and can account for up to 20 nm range of overall CD budget.

Citation Download Citation

Wilman Tsai, Frederick T. Chen, Marilyn Kamna, Scott Chegwidden, Steven M. Labovitz, Jeff N. Farnsworth, and Giang T. Dao "Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-μm-generation advanced mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328796

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