1 September 1998 Present status of ArF lithography development and mask technology
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328844
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
It has been proved that the ArF lithography have a potential for 0.13 micrometers -rule production. Further application of OPC, PSM, and TSI have the possibility to enhance the ArF technology to 0.1 micrometers rule. Further research for ArF scanner, resist, process integration, resolution enhancement technologies, and photomask technology is necessary to bring ArF lithography in production use. In Selete, research program of ArF lithography has been started. The overview of Selete program is presented. This program is based on the collaboration with vendors of equipment, substrate, resist, mask, et al.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Morimoto, Hiroshi Ohtsuka, "Present status of ArF lithography development and mask technology", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328844; https://doi.org/10.1117/12.328844
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