1 September 1998 Process optimization for mask fabrication
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328799
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Recently, next-generation mask fabrication processes have been actively examined for application with Electron Beam writing tools and chemically amplified resists. In this study, we used a variable shaped electron beam writing system with an accelerating voltage and chemically amplified resist to investigate the dependence of the CD error in a localized area of a 6025 mask on the process factors, with the goal of fabricating more accurate masks with improving sensitivity. Our results indicated that CD error in a localized area did not depend on the resist thickness. Higher sensitivity and CD uniformity were achieved simultaneously. Moreover, we could isolate the CD error caused by the resist heating effect is more apparent for higher doses than lower doses. However, a higher dose gives rise to a small CD change rate. In this experiment, the effect of the lower CD change rate at a higher dose counterbalances the resist heating effect. By decreasing CD error in a localized area, we obtained a CD uniformity of 14 nm in a 100 mm area on the mask.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Sakurai, Hideaki Sakurai, Masamitsu Itoh, Masamitsu Itoh, Akitoshi Kumagae, Akitoshi Kumagae, Hirohito Anze, Hirohito Anze, Takayuki Abe, Takayuki Abe, Iwao Higashikawa, Iwao Higashikawa, } "Process optimization for mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328799; https://doi.org/10.1117/12.328799


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