Requirements of attenuated PSM for 0.18-um gate patterns

Hideaki Hasegawa; Toru Higashi; Naoyuki Ishiwata; Satoru Asai; Isamu Hanyu

doi:10.1117/12.328860

1 September 1998 Requirements of attenuated PSM for 0.18-μm gate patterns

Hideaki Hasegawa, Toru Higashi, Naoyuki Ishiwata, Satoru Asai, Isamu Hanyu

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328860
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

Improving resolution and focus latitude is needed in the manufacturing 0.18 micrometers LSI devices using the KrF lithography. In order to achieve this requirement, the attenuated phase shift mask (Att.PSM) has been proposed. 0.18 micrometers gate patterns can be attained using the Att.PSM with annular illumination. However it is expected to cause a differences in the printability of mask fabrication error by using a conventional illumination when annular illumination is used. Therefore, before applying our Att.PSM to practical use, we need to investigate the printability of Att.PSM fabrication errors when using annular illumination for 0.18 micrometers line patterns. Now, we clarify the printability of Att.PSM fabrication errors via simulation and experiments. Then we estimated the requirements of Att.PSM for 0.18 micrometers gate patterns. To apply the Att.PSM with annular illumination, we showed the feasibility of the Att.PSM fabrication. The other hand, we understood that it is necessary to improve technology of inspection and repair.

Citation Download Citation

Hideaki Hasegawa, Toru Higashi, Naoyuki Ishiwata, Satoru Asai, and Isamu Hanyu "Requirements of attenuated PSM for 0.18-μm gate patterns", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328860

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