Revised SIA road map for mask technology

John Canning

doi:10.1117/12.328862

1 September 1998 Revised SIA road map for mask technology

John Canning

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328862
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

The growth of the semiconductor industry is driven by steady advances in microlithography. The Semiconductor Industry Association (SIA) Roadmap has been revised for 1997 with accelerated requirements. The 180nm generation has been pulled in two years from 2001 to 1999. Subsequent generations have all been accelerated one year. In addition, the Roadmap is now driven by microprocessor needs. The minimum feature size is now the isolated line of a microprocessor gate, and it is approximately 75 percent of the generation size. Optical lithography is reaching its cost-effective limits near 130nm. The next generation lithography must be available by 2003 for pilot production, but the path to get there is not clear. To meet the needs of its members, SEMATECH has embarked on a program to explore and reach a global consensus on the technology options on the Roadmap for NGL. This paper will review the revised SIA Roadmap and its implications on the mask industry for smaller feature sizes, larger reticles and new technologies. The paper will also review the status of the SEMATECH program to reach consensus on NGL including the critical issues for each technology. The role of the mask industry will be explored.

Citation Download Citation

John Canning "Revised SIA road map for mask technology", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328862

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