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17 September 1998 Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells
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Proceedings Volume 3413, Materials Modification by Ion Irradiation; (1998) https://doi.org/10.1117/12.321942
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada
Abstract
A comparison has been made of the shifts induced in the photoluminescence (PL) emission wavelength of a GaAs/AlGaAs multiple quantum well (QW) structure following irradiation with H, He and As ions. Ions energies and fluences were chosen to produce matching numbers and distributions of lattice atom displacements across the structure. Samples were then annealed at 900 degrees C for 30s to intermix the QWs and low temperature photoluminescence as used to measure the shifts in the QW bandgap energies. At common concentration of atomic displacements, the PL blueshift increased with the mass of the implanted ion. For these anneal parameters, saturation of the blueshift from the narrowest QW was observed in all three irradiation at an average vacancy production concentration of approximately 1022 cm-3. No significant difference in PL shifts was found when the irradiations were performed at 200 degrees C sample temperature.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard D. Goldberg, Hark Hoe Tan, M. B. Johnston, Chennupati Jagadish, Michael Gal, and Ian V. Mitchell "Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells", Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); https://doi.org/10.1117/12.321942
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