17 September 1998 Surface modification of sapphire by ion implantation
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Proceedings Volume 3413, Materials Modification by Ion Irradiation; (1998) https://doi.org/10.1117/12.321960
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada
The range of microstructures and properties of sapphire that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be 'amorphous', perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into 'pure' metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy, optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl J. McHargue, Carl J. McHargue, "Surface modification of sapphire by ion implantation", Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321960; https://doi.org/10.1117/12.321960

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