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9 October 1998 Photoluminescence study of wurtzite Si-doped GaN thin films
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Proceedings Volume 3418, Advances in Optical Beam Characterization and Measurements; (1998) https://doi.org/10.1117/12.326645
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada
Abstract
The photoluminescence (PL) temperature dependence of wurtzite n-type GaN thin films grown on (0001) sapphire substrates by Magnetron sputter epitaxy is reported. Samples were non-intentionally doped, lightly and highly Si-doped. The PL of non-intentionally doped samples consist of the near band edge emission and a broad yellow band (YB) near 2.2 eV. This yellow emission is equally present in spectra of all Si-doped samples. The bound exciton (D0-X) at 3.488 eV and (A0-X) at 3.456 eV are present only in the lightly Si-doped samples. The evolution of the energy position of the (D0-X) is the same as the band gap temperature variation, but the (A0-X) transition is anormally independent of the temperature in the range studied here. In both Si-doped GaN samples a peak at 3.318 eV and transitions between 3.36 and 3.39 eV are observed. The temperature dependence of the latter shows a fine structure composed of four peaks at 3.364 eV, 3.368 eV, 3.375 eV and 3.383 eV. They are tentatively attributed to the superposition of two donor-acceptor and band-acceptor transitions. This interpretation implies the presence of two donors (D1,D2) and two acceptors (A1,A2). From the energy position of the band-acceptor and the energy gap of GaN at 20 K, an acceptor ionization energy of 120 and 135 meV respectively is obtained. Assuming 10 meV for a Coulomb interaction energy of the ionized donor-acceptor pairs, a donor ionization energy of 14 and 18 meV respectively is obtained from the energy difference between the donor-acceptor and the band-acceptor positions. An activation energy of 10.8 meV is deduced from the temperature dependence of the YB. The shallow donor (about 10 meV) contributes to the mechanism of the YB.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed Soltani, Cosmo Carlone, N. Sylvain Charbonneau, and Shyam M. Khanna "Photoluminescence study of wurtzite Si-doped GaN thin films", Proc. SPIE 3418, Advances in Optical Beam Characterization and Measurements, (9 October 1998); https://doi.org/10.1117/12.326645
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