22 June 1998 Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341902 (1998) https://doi.org/10.1117/12.311000
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Selective overgrowth method has been sued to grow GaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) and sublimation technology. MgO, Si and SiO2 which have different thermal conductivities and thermal expansion coefficients, have been chosen as mask materials. The microstructure and selectively grown GaN and the lateral growth mechanisms of sublimation and MOCVD have also ben investigated by transmission electron microscopy and scanning electron microscopy. The effect of different mask materials on reduction of dislocation density is discussed. The experimental results indicate that Si is the best mask material for GaN lateral overgrowth. The dislocation density is about 109 cm-2 above the window areas, and it is reduced to 106 cm-2 in the lateral overgrowth region above the Si mask.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Wang, Jie Wang, Satoru Tottori, Satoru Tottori, Maosheng Hao, Maosheng Hao, Hisao Sato, Hisao Sato, Shiro Sakai, Shiro Sakai, Marek Osinski, Marek Osinski, } "Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341902 (22 June 1998); doi: 10.1117/12.311000; https://doi.org/10.1117/12.311000
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