Phonon-assisted photoluminescence in wurtzite GaN epilayer

Wei Liu; Ming Fu Li; ShiJie Xu; Kazuo Uchida; Koh Matsumoto

doi:10.1117/12.311027

22 June 1998 Phonon-assisted photoluminescence in wurtzite GaN epilayer

Wei Liu, Ming Fu Li, ShiJie Xu, Kazuo Uchida, Koh Matsumoto

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341905 (1998) https://doi.org/10.1117/12.311027
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Photoluminescence of wurztite GaN epilayer was measured in the range of 4K to 300K. At low temperature, the neutral- donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied.Lo phonon-assisted photoluminescence associated with both the bound exciton and the free exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.

Citation Download Citation

Wei Liu, Ming Fu Li, ShiJie Xu, Kazuo Uchida, and Koh Matsumoto "Phonon-assisted photoluminescence in wurtzite GaN epilayer", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341905 (22 June 1998); https://doi.org/10.1117/12.311027

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