22 June 1998 MOCVD growth of AlGaN UV LEDs
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341907 (1998) https://doi.org/10.1117/12.311042
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH3, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm represents the first report of LED operation from an indium-free GaN QW diode.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Han, Jung Han, Mary Hagerott Crawford, Mary Hagerott Crawford, } "MOCVD growth of AlGaN UV LEDs", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341907 (22 June 1998); doi: 10.1117/12.311042; https://doi.org/10.1117/12.311042
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