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22 June 1998 MPACVD processing technologies for planar integrated optics
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190C (1998)
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Optical circuits based on low-loss glass waveguide are the practical and promising approaches to integrate different functional components for optical communication system. Microwave plasma assisted chemical vapor deposition produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. A microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer thus deposited on the substrates with reasonable high growth rate. Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The main emphasis has been on optimizing the deposition parameters and reproducibility. An uniform, low-loss film can be made by properly balancing the precursor flows. The refractive index of deposited film can also be controlled by adjusting the flow ratio of SiCl4 and GeCl4 bubblers. Deposited films was characterized by prism coupler, loss measurement, residual stress, and composition analysis. The resulted refractive index step can be varied between 1.46 to 1.60. Waveguide can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on mask layer. Core layer was remove by the plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma etch. Etch rate of 3000-4000 angstrom/min has been achieved by using ICP compared to typical etch rate of 200-300 angstrom/min by using conventional RIE.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng-Chung Li, Robert Addison Boudreau, and Terry P. Bowen "MPACVD processing technologies for planar integrated optics", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190C (22 June 1998);

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