Paper
22 June 1998 High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD
Xiaoyu Ma, Qing Cao, Guohong Wang, Liang Guo, Peng Lian, Liming Wang, Xiaoyan Zhang, Yali Yang, Hongqin Zhang, Lianhui Chen
Author Affiliations +
Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190I (1998) https://doi.org/10.1117/12.311001
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoyu Ma, Qing Cao, Guohong Wang, Liang Guo, Peng Lian, Liming Wang, Xiaoyan Zhang, Yali Yang, Hongqin Zhang, and Lianhui Chen "High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190I (22 June 1998); https://doi.org/10.1117/12.311001
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KEYWORDS
Semiconductor lasers

Aluminium gallium indium phosphide

Quantum wells

Laser damage threshold

Continuous wave operation

Metalorganic chemical vapor deposition

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