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22 June 1998 Conduction-band mass determinations for n-type InGaAs/InAlAs single quantum wells
Eric D. Jones, Nobuo Kotera, John L. Reno, Yongjie Wang
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190K (1998) https://doi.org/10.1117/12.311003
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
We report the measurement of the conduction band mass in n- type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-IR cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far-IR cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N2D equals 3 X 1011 cm-2 at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of mc equals 0.062m0 while the far-IR cyclotron resonance measurements gave mc equals 0.056m0. Both measurements show no evidence for any significant conduction-band nonparabolicity.
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Eric D. Jones, Nobuo Kotera, John L. Reno, and Yongjie Wang "Conduction-band mass determinations for n-type InGaAs/InAlAs single quantum wells", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190K (22 June 1998); https://doi.org/10.1117/12.311003
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KEYWORDS
Quantum wells
Spectroscopy
Temperature metrology
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