Paper
22 June 1998 Progress in high-power VCSELs and arrays
Rainer Michalzik, Martin Grabherr, Roland Jaeger, Michael Miller, Karl Joachim Ebeling
Author Affiliations +
Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190P (1998) https://doi.org/10.1117/12.311008
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Recent achievements in the design and fabrication of monolithic high power vertical cavity surface emitting lasers (VCSELs) are reviewed and major distinctions between the scaling properties of top and bottom emitting devices clarified. Although a few hundred milliwatts optical power can be extracted from a single bottom emitting laser, decreasing efficiencies with increasing device diameter suggest the investigation of 2D laser arrays. First experimental results are presented, featuring oxide confined VCSEL arrays at 980 nm wavelength with 3 X 3 elements and maximum output powers up to 650 mW, still delivering 270 mW with 25 percent conversion efficiency under continuous wave operation. With further optimizations of device size and array pitch, emitted power densities averaged over the entire chip area in excess of 1 kW/cm2 should be attainable.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rainer Michalzik, Martin Grabherr, Roland Jaeger, Michael Miller, and Karl Joachim Ebeling "Progress in high-power VCSELs and arrays", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190P (22 June 1998); https://doi.org/10.1117/12.311008
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Cited by 12 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Continuous wave operation

High power lasers

Oxides

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