22 June 1998 Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190Q (1998) https://doi.org/10.1117/12.311010
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Several vertical-cavity surface-emitting laser (VCSEL) structures are investigated by means of 3D steady-state electrical-thermal-optical numerical modeling. Electrical and thermal models are coupled via: (i) heat generation by current passing through the diode; (ii) temperature dependence of the diffusion potential of the junction; and (iii) temperature dependence of the bulk resistivity of passive material at both sides of the junction. Optical waveguide model is coupled to electrical-thermal model through position-dependent carrier recombination lifetime and temperature-dependent refractive-index. Simulation is performed for cylindrically symmetric two-sided oxide- confined intracavity-contact VCSELs. For comparison purposes, numerical data are acquired for materially identical bottom-emitting mesa laser and p-side intracavity- contact VCSEL. Nonuniformity of the main device characteristics is studied. Several different phenomena are shown to contribute to nonuniformity: (i) current crowding due to device geometry; (ii) current crowding induced by stimulated emission processes; (iii) current spreading related to oxide positioning; (iv) temperature related effects.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek Osinski, Vladimir A. Smagley, Gennady A. Smolyakov, Tengiz Svimonishvili, Petr Georgievich Eliseev, George J. Simonis, "Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190Q (22 June 1998); doi: 10.1117/12.311010; https://doi.org/10.1117/12.311010

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