22 June 1998 Theoretical model for studying hot phonon effects and electron energy relaxation in GaN: the roles of A1-mode and E1-mode optical phonons
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341911 (1998) https://doi.org/10.1117/12.311022
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
The decay of a zone-center LO-phonon in GaN into a TO phonon and a LA phonon is theoretically investigated, because its decay into two LA phonons is forbidden in GaN. A theoretical model is presented to study the effect of nonequilibrium LO and TO phonons on the electron energy relaxation rate. The individual contributions of A1 mode and E1 optical phonons in the overall electron energy relaxation processes are also discussed.
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Chin-Yi Tsai, Chin-Yao Tsai, Jenkins C.H. Chen, Tien-Li Sung, Fang-Ping Shih, Tsu-Yin Wu, "Theoretical model for studying hot phonon effects and electron energy relaxation in GaN: the roles of A1-mode and E1-mode optical phonons", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341911 (22 June 1998); doi: 10.1117/12.311022; https://doi.org/10.1117/12.311022
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