Band structure of interdiffused InGaN/GaN quantum wells

Elaine M. T. Cheung; Michael C. Y. Chan; E. Herbert Li

doi:10.1117/12.311023

22 June 1998 Band structure of interdiffused InGaN/GaN quantum wells

Elaine M. T. Cheung, Michael C. Y. Chan, E. Herbert Li

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341912 (1998) https://doi.org/10.1117/12.311023
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero- interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LED and laser of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89eV to 3.44eV. InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we will present the band structure of strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.

Citation Download Citation

Elaine M. T. Cheung, Michael C. Y. Chan, and E. Herbert Li "Band structure of interdiffused InGaN/GaN quantum wells", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341912 (22 June 1998); https://doi.org/10.1117/12.311023

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