22 June 1998 Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341913 (1998) https://doi.org/10.1117/12.311024
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
A study of near-band-edge optical properties on ZnSe epilayers grown on GaAs substrates using various modulation techniques is presented. We compare the contactless electroreflectance (CER) and piezoereflectance (PzR) spectra to ascertain that our ZnSe epilayers of 1.2 micrometers in thickness grown on GaAs substrates are under a biaxial tensile strain. The defect-related transitions near the ZnSe/GaAs interface are also compared by identifying the photoreflectance (PR) and other spectra. In addition, in order to observe the temperature-dependent energy splitting and strains, we present a detailed investigation of the heavy and light-hole related transition energies as a function of temperature in the 15-200 K range by identifying the excitonic signatures in the CER spectra. We have also calculated the energy splitting between heavy and light-hole valence bands by utilizing the temperature-dependent elastic constants for ZnSe and the thermal-expansion coefficients for ZnSe and GaAs. Both the experimental result and the theoretical calculation have shown a similar trend that the biaxial tensile strains decrease in magnitude with increasing temperatures in the 1.2 micrometers ZnSe epilayer grown on a GaAs substrate.
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Ru-Chin Tu, Ru-Chin Tu, Yan-Kuin Su, Yan-Kuin Su, Ying-Sheng Huang, Ying-Sheng Huang, Shoou-Jinn Chang, Shoou-Jinn Chang, } "Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341913 (22 June 1998); doi: 10.1117/12.311024; https://doi.org/10.1117/12.311024
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