22 June 1998 Experimental Luttinger parameter determination by confined states in InGaAs/InAlAs multiple quantum well structures
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341914 (1998) https://doi.org/10.1117/12.311025
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures were studied with photocurrent spectroscopy. Based on the envelope function model in the effective mass approximation, effective mass and valence band offset were derived from the experimental eigen energies. The effective masses of the heavy hole and the light hole were 0.39 m0 and 0.051 m0 in a direction normal to the MQWs plane. The valence band offset was 0.22 eV. Luttinger parameters calculated from the effective masses were (gamma) 1 equals 11 and (gamma) 2 equals 4.3. The effective masses in the direction parallel estimated from the Luttinger parameters were 0.065 m0 and 0.14 m0. The parallel mass of the heavy hole estimated by this experiment agreed to the one by cyclotron resonance, 0.061 m0.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichi Tanaka, Nobuo Kotera, H. Nakamura, "Experimental Luttinger parameter determination by confined states in InGaAs/InAlAs multiple quantum well structures", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341914 (22 June 1998); doi: 10.1117/12.311025; https://doi.org/10.1117/12.311025
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