22 June 1998 Carrier distribution in asymmetric dual quantum wells
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341918 (1998) https://doi.org/10.1117/12.311030
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
The carrier density distribution in MQWs is investigated using asymmetric dual quantum wells (ADQWs). The ADQWs consist of a stake of double quantum wells with different well widths. The corresponding spontaneous emission for each well is centered on 0.8 micrometers and 0.83 micrometers , respectively. The carrier recombination in each quantum well can be distinguished by the EL spectrum. We theoretically calculate the EL spectrum of the ADQWs using the multi-band effective mass theory and density matrix formalism with different carrier distribution condition. In the multi-band effective mass theory, valence band mixing is taken into account by a 4 X 4 Luttinger-Kohn Hamiltonian. A Lorentzian lineshape function is used to include the intraband relaxation and lineshape broadening. The comparison of the calculated results with the experimentally measured EL spectrum and TE/TM mode ratio is given. At 200mA injection current,the theoretical EL spectrum shows very good agreement with the experimental results when the carrier density in the p-side well is 17 percent higher than that in the n-side well. Decreasing the injection current, the uniformity of the carrier density distribution becomes better. The reasons for the behavior of the carrier distributions are briefly discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Fuh Lin, Ching-Fuh Lin, Bor-Lin Lee, Bor-Lin Lee, } "Carrier distribution in asymmetric dual quantum wells", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341918 (22 June 1998); doi: 10.1117/12.311030; https://doi.org/10.1117/12.311030
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