22 June 1998 MBE-grown high-efficiency 808-nm laser diodes
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341919 (1998) https://doi.org/10.1117/12.311031
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
High power semiconductor lasers operating at 808 nm lasing wavelength with high internal quantum efficiency and low internal loss have been fabricated by solid source MBE. Experimental results have shown as high as 65.5 percent maximum wall-plug efficiency at room temperature for 1.5 mm cavity length devices. The wall-plug efficiency maintains up to 58 percent even when the devices operate at 6 watts of CW output power.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinqiao Wang, Xinqiao Wang, Jun Wang, Jun Wang, Geoffrey T. Burnham, Geoffrey T. Burnham, } "MBE-grown high-efficiency 808-nm laser diodes", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341919 (22 June 1998); doi: 10.1117/12.311031; https://doi.org/10.1117/12.311031
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