17 June 1998 Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs
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Proceedings Volume 3421, Display Technologies II; (1998) https://doi.org/10.1117/12.311059
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
The performance of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is influenced by the effective intrinsic a-Si:H thickness which is the remaining thickness of intrinsic a-Si:H after n+-Si etching for back- channel-etch type a-Si:H TFTs. As the thickness of the as- deposited a-Si:H increases, the on-current and linear mobility of the TFT decrease significantly, but the threshold voltage and saturation mobility only change slightly. It is caused by the series resistance and space- charge-limited current for the as-deposited a-Si:H film. On the other hand, when the thickness of the a-Si:H after n+-Si etching decreases from 200 nm to 150 nm, the Ion, (mu) s, (mu) lin, and Vth do not change greatly. However, if the effective thickness of a-Si:H reduces to 50 nm, the Ion, (mu) s, and (mu) lin decrease and Vth increase. It is the result of the Fermi level pinning at the back-channel surface and plasma-damage for thin a-Si after n+-Si etching.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-Wei Tsai, Fang-Chen Luo, HuangChung Cheng, "Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs", Proc. SPIE 3421, Display Technologies II, (17 June 1998); doi: 10.1117/12.311059; https://doi.org/10.1117/12.311059
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