Influence of the deposition of PECVD hydrogenated silicon nitride on the transparency of an indium tin oxide underlayer

Hui-Chu Lin; I-Min Lu

doi:10.1117/12.311062

17 June 1998 Influence of the deposition of PECVD hydrogenated silicon nitride on the transparency of an indium tin oxide underlayer

Hui-Chu Lin, I-Min Lu

Author Affiliations +

Proceedings Volume 3421, Display Technologies II; (1998) https://doi.org/10.1117/12.311062
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

The effects of the deposition of PECVD hydrogenated silicon nitride (SiN_x:H) on indium tin oxide underlayer has been investigated. PECVD SiN_x:H films were deposited with various film thickness, substrate temperature, gas flow rate, pressure, and RF power. Two kinds of ITO films prepared wither ex-situ or in-situ thermal annealing methods are examined by PECVD SiN_x:H deposition. Experimental results have shown that the formation of whitened ITO is related to redundant reactive species from SiH₄ and H₂ during the initial stage of SiN_x:H deposition. NH₃/SiH₄ flow ratio is found to be one of the key factors to affect whitening of ITO films during SiN_x:H deposition. In-situ annealed ITO films could be more chemically stable than ex-situ annealed ones since in-situ annealed ITO films have less optical degradation than ex- situ annealed ones after PECVD SiN_x:H deposition.

Citation Download Citation

Hui-Chu Lin and I-Min Lu "Influence of the deposition of PECVD hydrogenated silicon nitride on the transparency of an indium tin oxide underlayer", Proc. SPIE 3421, Display Technologies II, (17 June 1998); https://doi.org/10.1117/12.311062

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