17 June 1998 Influence of the deposition of PECVD hydrogenated silicon nitride on the transparency of an indium tin oxide underlayer
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Proceedings Volume 3421, Display Technologies II; (1998); doi: 10.1117/12.311062
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
The effects of the deposition of PECVD hydrogenated silicon nitride (SiNx:H) on indium tin oxide underlayer has been investigated. PECVD SiNx:H films were deposited with various film thickness, substrate temperature, gas flow rate, pressure, and RF power. Two kinds of ITO films prepared wither ex-situ or in-situ thermal annealing methods are examined by PECVD SiNx:H deposition. Experimental results have shown that the formation of whitened ITO is related to redundant reactive species from SiH4 and H2 during the initial stage of SiNx:H deposition. NH3/SiH4 flow ratio is found to be one of the key factors to affect whitening of ITO films during SiNx:H deposition. In-situ annealed ITO films could be more chemically stable than ex-situ annealed ones since in-situ annealed ITO films have less optical degradation than ex- situ annealed ones after PECVD SiNx:H deposition.
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Hui-Chu Lin, I-Min Lu, "Influence of the deposition of PECVD hydrogenated silicon nitride on the transparency of an indium tin oxide underlayer", Proc. SPIE 3421, Display Technologies II, (17 June 1998); doi: 10.1117/12.311062; https://doi.org/10.1117/12.311062
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KEYWORDS
Transmittance

Plasma enhanced chemical vapor deposition

Plasma

Silicon

Tin

Indium

Oxides

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