14 July 1998 Laser parameters of n-i-p-i crystals
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Proceedings Volume 3423, Second GR-I International Conference on New Laser Technologies and Applications; (1998) https://doi.org/10.1117/12.316565
Event: Second GR-I International Conference on New Laser Technologies and Applications, 1997, Olympia, Greece
Abstract
The rate of spontaneous radiative recombination and gain coefficient for the high-doping superlattices versus the pump current are calculated in the model with no k-selection rule. Results for the inversion current density and differential gain at suitable design of superlattice parameters are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitrii V. Ushakov, Dmitrii V. Ushakov, Valerii K. Kononenko, Valerii K. Kononenko, } "Laser parameters of n-i-p-i crystals", Proc. SPIE 3423, Second GR-I International Conference on New Laser Technologies and Applications, (14 July 1998); doi: 10.1117/12.316565; https://doi.org/10.1117/12.316565
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