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14 July 1998 Numerical modeling of long-wavelength vertical-cavity surface-emitting semiconductor lasers. I. Continuous-wave modeling
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Proceedings Volume 3423, Second GR-I International Conference on New Laser Technologies and Applications; (1998) https://doi.org/10.1117/12.316558
Event: Second GR-I International Conference on New Laser Technologies and Applications, 1997, Olympia, Greece
Abstract
Long-wavelength vertical-cavity surface-emitting semiconductor lasers are investigated and heating effects on the light vs. current characteristics of VCSELs are analyzed by thermal-electric, optical, and electronic modeling. The model includes nonuniform current injection, carrier diffusion, stimulated emission, distributed heat sources, and active material band structure calculations. Device parameters such as threshold current, and external quantum efficiency are evaluated. Simulated power vs. current characteristics exhibit the typical thermal roll-over in continuous wave operation. The model is applied to two specific optimized underetched structure designs in order to provide an understanding of the current-funneling mechanism and the thermal limitations of such devices.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Tsigopoulos, V. Paschos, Paul Salet, and Joel Jacquet "Numerical modeling of long-wavelength vertical-cavity surface-emitting semiconductor lasers. I. Continuous-wave modeling", Proc. SPIE 3423, Second GR-I International Conference on New Laser Technologies and Applications, (14 July 1998); doi: 10.1117/12.316558; https://doi.org/10.1117/12.316558
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