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14 July 1998 Numerical modeling of long-wavelength vertical-cavity surface-emitting semiconductor lasers. II. Transient thermal modeling
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Proceedings Volume 3423, Second GR-I International Conference on New Laser Technologies and Applications; (1998) https://doi.org/10.1117/12.316559
Event: Second GR-I International Conference on New Laser Technologies and Applications, 1997, Olympia, Greece
Abstract
In this paper, a detailed analysis of the transient heat flow in a VCSEL is carried out. The transient thermal response of VCSEL axisymmetric structures is calculated based on a Green's functions method to solve the time- dependent thermal conduction equation. Based on this approach, the heat flow inside the device due to the dominant heat sources in the active and passive layers has been assessed. The influence of the current spreading and the material parameters on the transient thermal response is investigated, and the temporal evolution of the temperature distribution and the lasing wavelength shift are calculated and found to be in good agreement with results obtained by a finite element method. Finally, the time constant of the active layer temperature rise due to a stepwise increase in current for a double-fused long wavelength VCSEL is calculated.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Tsigopoulos and V. Paschos "Numerical modeling of long-wavelength vertical-cavity surface-emitting semiconductor lasers. II. Transient thermal modeling", Proc. SPIE 3423, Second GR-I International Conference on New Laser Technologies and Applications, (14 July 1998); https://doi.org/10.1117/12.316559
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