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8 October 1998 FTIR reflectance characterization of SIMOX buried oxide layers
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The technique of implanting silicon wafers with sufficient oxygen to form a continuous buried oxide (BOX) layer is known as SIMOX (Separation by Implanting Oxygen). SIMOX wafers present leading-edge semiconductor technology with a great need for on-line process control. Development of thin (80 to 200 nm) BOX is a primary step toward improved device performance and cost reduction. Tight control of the BOX properties, such as the implant dose, thickness, refractive index, and composition, is required in the production. A method to characterize non-destructively BOX layer by means of FTIR normal incidence reflectance spectroscopy has been developed with a particular orientation to in-situ applications. A data reduction procedure based on multi-layer model delivers thickness and dielectric function of a thin BOX layer, and enables one to measure the implant dose with a precision of a tenth of a percent. A compact and robust FTIR spectrometer from On-Line Technologies, combined with sampling optics and sensitive detection, provides excellent signal-to- noise ratio and is well suited for a coupling with oxygen implantation machines for in-situ process control.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor A. Yakovlev, Sylvie Bosch-Charpenay, Peter A. Rosenthal, Peter R. Solomon, and Jiazhan Xu "FTIR reflectance characterization of SIMOX buried oxide layers", Proc. SPIE 3425, Optical Diagnostic Methods for Inorganic Transmissive Materials, (8 October 1998);

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