Gallium-arsenide electron-bombarded CCD technology

Verle W. Aebi; Kenneth A. Costello; John P. Edgecumbe; John J. Boyle; William L. Robbins; Ray Bell; David J. Burt; Andrew Harris; Ian Palmer; Peter J. Pool

doi:10.1117/12.331219

18 November 1998 Gallium-arsenide electron-bombarded CCD technology

Verle W. Aebi, Kenneth A. Costello, John P. Edgecumbe, John J. Boyle, William L. Robbins, Ray Bell, David J. Burt, Andrew Harris, Ian Palmer, Peter J. Pool

Author Affiliations +

Proceedings Volume 3434, Image Intensifiers and Applications; and Characteristics and Consequences of Space Debris and Near-Earth Objects; (1998) https://doi.org/10.1117/12.331219
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Electron Bombarded Charge Coupled Devices (EBCCD) which utilize a high performance Gallium Arsenide (GaAs) photocathode have been fabricated and characterized for performance and tube operating life. The EBCCD utilized an 11 mm diagonal, backside illuminated, frame transfer CCD compatible with RS170 video output. The CCD incorporated lateral anti-blooming structures optimized for backside operation. The EBCCD tube was proximity focused and operated with high gain (greater than 150) at low electron landing voltages (less than 2 kV). The EBCCD was integrated in a gated camera system with fast rise and fall times (less than 50 ns). Predicted operating life in a gated camera system as determined by accelerated tests is in excess of 12,000 hours, limited by photocathode degradation.

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Verle W. Aebi, Kenneth A. Costello, John P. Edgecumbe, John J. Boyle, William L. Robbins, Ray Bell, David J. Burt, Andrew Harris, Ian Palmer, and Peter J. Pool "Gallium-arsenide electron-bombarded CCD technology", Proc. SPIE 3434, Image Intensifiers and Applications; and Characteristics and Consequences of Space Debris and Near-Earth Objects, (18 November 1998); https://doi.org/10.1117/12.331219

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