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26 October 1998 Changes in surface characteristics of HgCdTe by dry etching
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The surface of mercury cadmium telluride (Hg1-xcdxTe, x approximately equals 0.2) was etched by electron cyclotron resonance (ECR) plasma utilizing a mixture of CH4 and H2. The etch rate was optimized as a function of mix ratio of H2/CH4 ECR power, total pressure, and DC bias voltage in order to arrive at smooth surface. The etched surface of HgCdTe was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), FT-IR and Hall effect measurements. Optimized etching conditions were 25% CH4, ECR power of 200 watts, total pressure of 5-7 mtorr and bias voltage of -80 V. XPS analysis revealed that atomic concentration of Hg and Te decreased, but that of Cd increased, indicating preferential etching. Also, hall effect measurement indicated increased carrier density, but decreased mobility of HgCdTe.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung Hun Song, Tae Ho Yoon, Suk-Ryong Hahn, Eui-Tae Kim, J. H. Kwon, Sang Gyu Lee, T. S. Hwang, Y. S. Lee, and Jae Mook Kim "Changes in surface characteristics of HgCdTe by dry etching", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998);

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