26 October 1998 Characterization of In-doped CdTe grown by molecular beam epitaxy
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Photoluminescence (PL) measurements on as-grown and hydrogenated In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the optical properties and the hydrogenation effects of In-doped CdTe films. The temperature dependence of the PL intensities for the as-grown In-doped CdTe films show that the peak at 1.590 eV observed at 12 K is related to shallow donor band recombination (D, h). Inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. The PL spectrum for the hydrogenated In-doped CdTe films shows that the intensity of the (D, h) peak decreases dramatically and that their longitudinal optical phonons disappear. These results indicate that the PL intensity and the linewidth of the (D, h) peak in as-grown In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes and that the decrease of the PL intensity of the (D, h) peak for the hydrogenated In-doped CdTe epilayer originates from the passivation effect of the ionized In donor level due to the hydrogenation.
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Tae Won Kang, Tae Won Kang, J. H. Leem, J. H. Leem, Y. B. Hou, Y. B. Hou, Y. S. Ryu, Y. S. Ryu, Ho-Young Lee, Ho-Young Lee, H. C. Jeon, H. C. Jeon, J. K. Hyun, J. K. Hyun, C. K. Kang, C. K. Kang, T. W. Kim, T. W. Kim, } "Characterization of In-doped CdTe grown by molecular beam epitaxy", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.327988; https://doi.org/10.1117/12.327988

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