Construction and performance of an 811x508 element multiwavelength PtSi IR CCD imager

Masahiro Shoda; Hidenobu Yamada; Hideki Yamanaka; Keiichi Akagawa

doi:10.1117/12.328014

26 October 1998 Construction and performance of an 811 x 508 element multiwavelength PtSi IR CCD imager

Masahiro Shoda, Hidenobu Yamada, Hideki Yamanaka, Keiichi Akagawa

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328014
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

In this paper, we propose a method of constructing a multi- wavelength IR imager and investigate some of its applications. The optical cavity structure has been used to improve the sensitivity of the IR imager for a long time. However, it can also be used as an on-chip interference filter. We developed two kinds of multi-wavelength IR imagers based on the 410 k pixel PtSi IRCCD, which has been previously reported by us. The type A multi-wavelength IR imager is composed of three kinds of pixels. In the device, three kinds of pixels with different spectral responsivities are arranged in the form of a stripe in the vertical direction of the CCD. The type A device is used within the wavelength range of 3 - 5.5 micrometer. The type B device is a multi-wavelength IR imager in which four kinds of pixels with different spectral responsivities are arranged in the vertical direction in the form of a stripe. The type B device is used within the wavelength range of 1.5 - 2.5 micrometer. We report the structure, the characteristics and some applications of the multi-wavelength IR imagers.

Citation Download Citation

Masahiro Shoda, Hidenobu Yamada, Hideki Yamanaka, and Keiichi Akagawa "Construction and performance of an 811 x 508 element multiwavelength PtSi IR CCD imager", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328014

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