26 October 1998 Construction and performance of an 811 x 508 element multiwavelength PtSi IR CCD imager
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Abstract
In this paper, we propose a method of constructing a multi- wavelength IR imager and investigate some of its applications. The optical cavity structure has been used to improve the sensitivity of the IR imager for a long time. However, it can also be used as an on-chip interference filter. We developed two kinds of multi-wavelength IR imagers based on the 410 k pixel PtSi IRCCD, which has been previously reported by us. The type A multi-wavelength IR imager is composed of three kinds of pixels. In the device, three kinds of pixels with different spectral responsivities are arranged in the form of a stripe in the vertical direction of the CCD. The type A device is used within the wavelength range of 3 - 5.5 micrometer. The type B device is a multi-wavelength IR imager in which four kinds of pixels with different spectral responsivities are arranged in the vertical direction in the form of a stripe. The type B device is used within the wavelength range of 1.5 - 2.5 micrometer. We report the structure, the characteristics and some applications of the multi-wavelength IR imagers.
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Masahiro Shoda, Hidenobu Yamada, Hideki Yamanaka, Keiichi Akagawa, "Construction and performance of an 811 x 508 element multiwavelength PtSi IR CCD imager", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328014; https://doi.org/10.1117/12.328014
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