26 October 1998 Electrical properties of MIS devices on CdZnTe/HgCdTe
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In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.
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Tae-Seok Lee, Tae-Seok Lee, Y. T. Jeoung, Y. T. Jeoung, Hyun Kyu Kim, Hyun Kyu Kim, Jae Mook Kim, Jae Mook Kim, Jinhan Song, Jinhan Song, S. Y. Ann, S. Y. Ann, Ji Young Lee, Ji Young Lee, Young Hun Kim, Young Hun Kim, Sun-Ung Kim, Sun-Ung Kim, Mann-Jang Park, Mann-Jang Park, S. D. Lee, S. D. Lee, Sang-Hee Suh, Sang-Hee Suh, "Electrical properties of MIS devices on CdZnTe/HgCdTe", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328083; https://doi.org/10.1117/12.328083


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