Latest improvements in QWIP technology at Thomson-CSF/LCR

Eric M. Costard; Philippe Francis Bois; Francis Audier; Eric Herniou

doi:10.1117/12.328018

26 October 1998 Latest improvements in QWIP technology at Thomson-CSF/LCR

Eric M. Costard, Philippe Francis Bois, Francis Audier, Eric Herniou

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328018
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

A novel architecture for both QWIP heterostructure and pixel design is described. This new approach completely eliminates the dark current of a conventional GaAs/GaAlAs multiple quantum well LWIR detector. The concept is first described, then the industrial feasibility is demonstrated on a 4 X 2 array with 50 micrometer pixel pitch. The performance modeling of FPA based on this new design shows that NETD as low as 15 mK is achievable at an operating temperature of 90 K and for arrays with 30 micrometer pitch.

Citation Download Citation

Eric M. Costard, Philippe Francis Bois, Francis Audier, and Eric Herniou "Latest improvements in QWIP technology at Thomson-CSF/LCR", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328018

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