26 October 1998 Latest improvements in QWIP technology at Thomson-CSF/LCR
Author Affiliations +
A novel architecture for both QWIP heterostructure and pixel design is described. This new approach completely eliminates the dark current of a conventional GaAs/GaAlAs multiple quantum well LWIR detector. The concept is first described, then the industrial feasibility is demonstrated on a 4 X 2 array with 50 micrometer pixel pitch. The performance modeling of FPA based on this new design shows that NETD as low as 15 mK is achievable at an operating temperature of 90 K and for arrays with 30 micrometer pitch.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric M. Costard, Philippe Francis Bois, Francis Audier, and Eric Herniou "Latest improvements in QWIP technology at Thomson-CSF/LCR", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328018; https://doi.org/10.1117/12.328018


QWIPs beyond FPAs: high-speed room-temperature detectors
Proceedings of SPIE (October 09 2001)
Quantum wells to quantum dots 640x512 pixels Long Wavelength...
Proceedings of SPIE (September 06 2006)
Dual-band QWIP MWIR/LWIR focal plane array test results
Proceedings of SPIE (July 16 2000)
Two color QWIP and extended wavebands
Proceedings of SPIE (June 12 2007)
QWIP from 4µm up to 18µm
Proceedings of SPIE (October 02 2006)

Back to Top