26 October 1998 Latest improvements in QWIP technology at Thomson-CSF/LCR
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Abstract
A novel architecture for both QWIP heterostructure and pixel design is described. This new approach completely eliminates the dark current of a conventional GaAs/GaAlAs multiple quantum well LWIR detector. The concept is first described, then the industrial feasibility is demonstrated on a 4 X 2 array with 50 micrometer pixel pitch. The performance modeling of FPA based on this new design shows that NETD as low as 15 mK is achievable at an operating temperature of 90 K and for arrays with 30 micrometer pitch.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric M. Costard, Philippe Francis Bois, Francis Audier, and Eric Herniou "Latest improvements in QWIP technology at Thomson-CSF/LCR", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328018; https://doi.org/10.1117/12.328018
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