26 October 1998 Study on the subband structure of HgCdTe surface by electron tunneling spectroscopy
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Abstract
In order to investigate the surface states of electron which can tunnel through the sufficiently thin insulator, the electron tunneling spectroscopy is used to measure the tunneling current in function of the bias voltage, and directly to get the subbands of accumulation layer. The tunneling current through ZnS barrier in the Hg1-xCdxTe-ZnS-In junction structure is measured by various applied bias at 77 K and 4.2 K. From the measurement at 77 K, the subband energy levels in the electron accumulation layer at the surface of n-type Hg1-xCdxTe are found to be located at -59 meV for the ground state and -13 meV for the first excited state relative to the Fermi level of Hg1-xCdxTe. At low temperature when the applied bias is larger than the difference between the work function of In and the electron affinity of ZnS, a negative differential resistance is measured. On the calculation using transfer matrix method it is understood that this negative conductance is attributed to Fowler-Nordheim tunneling which is caused by the variation of ZnS barrier according to the various applied bias.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Ki Hong, Jin-Ki Hong, Yun Chul Chung, Yun Chul Chung, In-Jae Kim, In-Jae Kim, Dong-Yun Shin, Dong-Yun Shin, Eun-Sung Kim, Eun-Sung Kim, Il-Soo Choi, Il-Soo Choi, Ki-Hyun Kim, Ki-Hyun Kim, Young-Taek Song, Young-Taek Song, Jeong-Chil Shim, Jeong-Chil Shim, Young Hun Kim, Young Hun Kim, Ki-Nam Oh, Ki-Nam Oh, Suk-Kyoung Hong, Suk-Kyoung Hong, Sun-Ung Kim, Sun-Ung Kim, Mann-Jang Park, Mann-Jang Park, S. S. Jeon, S. S. Jeon, "Study on the subband structure of HgCdTe surface by electron tunneling spectroscopy", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328010; https://doi.org/10.1117/12.328010
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