Paper
26 October 1998 Two-dimensional numerical simulation of HgCdTe infrared detectors
Nam Hong Jo, Sang Dong Yoo, B. G. Ko, Seok Woo Lee, J. Jang, S. D. Lee, Kae Dal Kwack
Author Affiliations +
Abstract
In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy,the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nam Hong Jo, Sang Dong Yoo, B. G. Ko, Seok Woo Lee, J. Jang, S. D. Lee, and Kae Dal Kwack "Two-dimensional numerical simulation of HgCdTe infrared detectors", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328063
Lens.org Logo
CITATIONS
Cited by 11 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mercury cadmium telluride

Heterojunctions

Instrument modeling

Sensors

Signal detection

Computer simulations

Doping

Back to Top