26 October 1998 Two-dimensional numerical simulation of HgCdTe infrared detectors
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In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy,the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nam Hong Jo, Nam Hong Jo, Sang Dong Yoo, Sang Dong Yoo, B. G. Ko, B. G. Ko, Seok Woo Lee, Seok Woo Lee, J. Jang, J. Jang, S. D. Lee, S. D. Lee, Kae Dal Kwack, Kae Dal Kwack, } "Two-dimensional numerical simulation of HgCdTe infrared detectors", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328063; https://doi.org/10.1117/12.328063

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