Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes

Larisa N. Romashko; Anatoly G. Klimenko; A. P. Kravchenko; Victor N. Ovsyuk; V. G. Voinov; V. V. Vasilyev

doi:10.1117/12.331320

18 November 1998 Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes

Larisa N. Romashko, Anatoly G. Klimenko, A. P. Kravchenko, Victor N. Ovsyuk, V. G. Voinov, V. V. Vasilyev

Proceedings Volume 3437, Infrared Spaceborne Remote Sensing VI; (1998) https://doi.org/10.1117/12.331320
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The investigation of MBE CdHgTe photodiode characteristics after pressure applying to n-type of junction has been carried out. The diodes parameters have been studied in the temperature range of 5 divided by 120 K. It was found that the mechanical stress causes the increase of traps amount with E_t approximately equals E_v plus 0.043 eV and E_t approximately equals E_v plus 0.032 eV. The energies of these traps have some temperature dependence. The diodes generation-recombination and trap-assisted tunneling currents significantly increase at forward and reverse biases. The value of RoA decreases in an order at T less than 60 K because of trap assisted tunneling via the dislocation levels. At high temperatures T greater than 60 K the value of RoA does not change and determined by the diffusion mechanism.

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Larisa N. Romashko, Anatoly G. Klimenko, A. P. Kravchenko, Victor N. Ovsyuk, V. G. Voinov, and V. V. Vasilyev "Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes", Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); https://doi.org/10.1117/12.331320

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