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18 November 1998 Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes
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The investigation of MBE CdHgTe photodiode characteristics after pressure applying to n-type of junction has been carried out. The diodes parameters have been studied in the temperature range of 5 divided by 120 K. It was found that the mechanical stress causes the increase of traps amount with Et approximately equals Ev plus 0.043 eV and Et approximately equals Ev plus 0.032 eV. The energies of these traps have some temperature dependence. The diodes generation-recombination and trap-assisted tunneling currents significantly increase at forward and reverse biases. The value of RoA decreases in an order at T less than 60 K because of trap assisted tunneling via the dislocation levels. At high temperatures T greater than 60 K the value of RoA does not change and determined by the diffusion mechanism.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larisa N. Romashko, Anatoly G. Klimenko, A. P. Kravchenko, Victor N. Ovsyuk, V. G. Voinov, and V. V. Vasilyev "Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes", Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998);

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