18 November 1998 Influence of ion implantation on the reflectance spectrum of HgCdTe
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Abstract
An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangyang Li, Xiangyang Li, JianHua Zhao, JianHua Zhao, Wenjuan Zhu, Wenjuan Zhu, Runqing Jiang, Runqing Jiang, Yueyuan Xia, Yueyuan Xia, Xiaoning Hu, Xiaoning Hu, Jun Zhao, Jun Zhao, Huiqin Lu, Huiqin Lu, Xinwen Hu, Xinwen Hu, Jiaxiong Fang, Jiaxiong Fang, } "Influence of ion implantation on the reflectance spectrum of HgCdTe", Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); doi: 10.1117/12.331317; https://doi.org/10.1117/12.331317
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