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19 November 1998 Model of the x-ray response of the ACIS CCD
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Abstract
We have developed a comprehensive model of the response of a CCD to soft x-ray illumination. The model is based on the Monte Carlo technique and follows the interactions with the device material of individual photons thrown into the structure, calculating device reaction to each of them. It incorporates a very detailed description of the CCD gate structure, as well as accurately measured absorption coefficients. The fluorescent and escape peak model takes into account interactions inside the gate structure, which dramatically improves the agreement with the experimental data at energies close to the Si absorption edge. The shape of the low energy tail is simulated according to our new model of electron cloud charge splitting at the interface between Si and SiO2. An origin of the tail in the horizontally split events is explained as coming from the p+ area in the channel stop region and is modeled accordingly.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Y. Prigozhin, Andrew P. Rasmussen, Mark W. Bautz, and George R. Ricker Jr. "Model of the x-ray response of the ACIS CCD", Proc. SPIE 3444, X-Ray Optics, Instruments, and Missions, (19 November 1998); https://doi.org/10.1117/12.331291
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